Number | Content | Specification Parameters |
---|---|---|
1 | Overall structure | Front-end equipment operation unit, front-end EFEM unit and plasma processing unit, front-end EFEM system and plasma processing unit split design |
2 | Plasma source | RF Inductively Coupled Plasma Source or Dual Frequency Plasma Source |
3 | Reaction chamber | RF Inductively Coupled Plasma Source or Dual Frequency Plasma Source |
4 | Mechanical transfer | Single-arm or double-arm high-precision manipulator |
5 | Wafer lifting | Mechanical Wafer pin lifting structure, Wafer pin adopts specific process |
6 | Vacuum pump | Dry vacuum pump, according to different installation locations and processes, choose 100-600m3/h specifications. If the process requires, a molecular pump can be added. |
7 | Process Pressure Control | Automatic pressure regulating butterfly valve |
8 | Vacuum detection | Pipeline vacuum gauge, reaction chamber full range vacuum gauge, process vacuum gauge |
9 | Process gas type | Standard configuration Ar, N2, O2, CF4 and other process gases can be added |
10 | Gas flow control | Mass Flow Controllers (MFCs) |
The main application of the equipment: photoresist ashing of silicon-based semiconductors and compound semiconductors, removal of photoresist after high-dose ion implantation, removal of adhesive on metal surface, removal of residual adhesive on Wafer surface, removal of residual pollutants on Wafer surface, wafer-level packaging pre-treatment process, etc. Main features of the equipment: Compatible with multi-size wafers, multi-reaction chamber customization, unique plasma processing space design, high plasma density, fast deglue rate, good uniformity, low cost of use, high degree of customization, this series The design of the equipment complies with the requirements of China's national safety standards and SEMI related safety standards. |
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