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VCP series wafer level plasma cleaning system

Applications: Removal of organic residues on the surface after wet process, removal of small particles on the wafer surface, removal and auxiliary removal of larger particles on the wafer surface, removal of carbides and other organic matter after deglue removal, surface cleaning before wafer-level packaging, wafer-level Surface activation treatment before packaging, wafer surface micro-passivation treatment, etc.

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Technical parameters Related Products

Number	Content	Specification Parameters
1	Overall structure	The system with load port is divided into front-end equipment operation unit, front-end EFEM unit and plasma processing unit, and the front-end EFEM system and plasma processing unit are designed separately
2	Plasma source	RF plasma source or dual frequency plasma source
3	Reaction chamber	The standard design is double reaction chamber, and single reaction chamber and multi-reaction chamber structure can be customized according to requirements
4	Mechanical transfer	Single-arm or double-arm high-precision manipulator
5	Wafer lifting	Mechanical Wafer pin lifting structure, Wafer pin adopts specific process
6	Vacuum pump	For dry vacuum pumps, the specification of 100-300m3/h is selected according to the installation location and process. Molecular pumps can be added if the process requires
7	Process Pressure Control	Automatic pressure regulating butterfly valve or fixed bypass structure
8	Vacuum detection	Pipeline vacuum gauge, reaction chamber full range vacuum gauge, process vacuum gauge
9	Process gas type	Standard configuration Ar, N2, O2, other process gases can be added
10	Gas flow control	Mass Flow Controllers (MFCs)
Main applications of the equipment: removal of organic residues on the surface after wet process, removal of small particles on the wafer surface, removal and auxiliary removal of larger particles on the wafer surface, removal of carbides and other organic matter after deglue removal, surface cleaning before wafer-level packaging, wafer Surface activation treatment before round-level packaging, micro-passivation treatment on wafer surface, etc. Main features of the equipment: Compatible with multi-size wafers, multi-reaction chamber customization, unique CCP plasma source design, high-clean reaction chamber, particle control of the whole machine space environment, optional radio frequency plasma generator or dual-frequency plasma Generator, high plasma density, good uniformity, upgradeable ultra-clean reaction chamber system.