Number | Content | Specification Parameters |
---|---|---|
1 | Overall structure | Front-end equipment operation unit, front-end EFEM unit and plasma processing unit, front-end EFEM system and plasma processing unit split design |
2 | Plasma source | RF Inductively Coupled Plasma Source or Dual Frequency Plasma Source |
3 | Reaction chamber | The standard design is double reaction chamber, and single reaction chamber and multi-reaction chamber structure can be customized according to requirements |
4 | Mechanical transfer | Single arm or double arm high precision manipulator Wafer lifting |
5 | Wafer lifting | Mechanical Wafer pin lifting structure, Wafer pin adopts specific process |
6 | Vacuum pump | Dry vacuum pump, according to different installation locations and processes, choose 100-600m3/h specifications. If the process requires, a molecular pump can be added. |
7 | Process Pressure Control | Automatic pressure regulating butterfly valve |
8 | Vacuum detection | Pipeline vacuum gauge, reaction chamber full range vacuum gauge, process vacuum gauge |
9 | Process gas type | Standard configuration Ar, N2, O2, CF4 and other process gases can be added |
10 | Gas flow control | Mass Flow Controllers (MFCs) |
The main applications of the equipment are: photoresist glazing of silicon-based semiconductor and compound semiconductor, photoresist removal after high-dose ion implantation, metal surface degluing, residual gel removal of Wafer surface, residual pollutants removal of Wafer surface, pre-treatment process of wafer level packaging, etc. Main features of the equipment: compatible with multi-size wafers, multi-reaction chamber customization, unique plasma processing space design, high plasma density, fast degumming rate, good uniformity, low cost, high degree of customization, the design of this series of equipment complies with the requirements of China national safety standards and SEMI related safety standards. |
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